UMX4NTR Rohm Semiconductor, UMX4NTR Datasheet - Page 2

• Manufacturer Part Number: UMX4NTR
• Description: TRANS DUAL NPN 20V 50MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMX4NTR

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 56 @ 10mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 1.5GHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Gain Bandwidth Ft Typ: 1.5GHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 50mA
• Transistor Case: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 1500 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 27
• Gain Bandwidth Product Ft: 1.5 KHz
• Dc Current Gain Hfe: 56
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Transistors
Fig.4 Gain bandwidth product vs. emitter current
Electrical characteristic curves
Fig.1 DC current gain vs. collector current
Fig.7 Insertion gain vs. collector current
500
200
100
25
20
15
10
50
20
10
5000
2000
1000
5
0
500
200
100
0.5
0.1 0.2
−0.1 −0.2
COLLECTOR CURRENT : Ic (mA)
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.5
−0.5 −1 −2
2
1
2
5
10
5
−5 −10 −20
Ta=25°C
V
f=200MHz
10 20
CE
E
20
Ta=25°C
V
C
(mA)
=12V
(mA)
Ta=25°C
V
CE
CE
=10V
=10V
50
50
−50
Fig.2 Collector-emitter saturation voltage
Fig.8 Insertion gain vs. collector voltage
500
200
100
50
20
10
30
25
20
15
10
5
0
0.1 0.2
COLLECTOR TO EMITTER VOLTAGE : V
0
Fig.5 Collector to base time constance
50
20
10
vs. collector current
5
2
1
0.1 0.2
COLLECTOR CURRENT : I
2
vs. collector current
COLLECTOR CURRENT : I
0.5
0.5
4
1
1
2
6
2
5
8
5
Ta=25°C
I
f=200MHz
10 20
C
C
=2mA
Ta=25°C
I
C
(mA)
/I
Ta=25°C
V
f=31.8MHz
10 20
10
B
CE
C
=5
(mA)
=10V
CE
50
12
(V)
50
EMX4 / UMX4N / IMX4
Fig.3 Capacitance vs. reverse bias voltage
5.0
2.0
1.0
0.5
0.2
0.1
Fig.9 Noise factor vs. collector current
0.1 0.2
25
20
15
10
20
10
5
0
0
0.1
0.1 0.2
Fig.6 Insertion gain vs. frequency
COLLECTOR TO BASE VOLTAGE : V
0.2
COLLECTOR CURRENT : I
0.5
0.5
FREQUENCY : f (GHz)
0.5
1
1
Rev.C
2
2
1
5
2
5
Cre
Cob
10 20
Ta=25°C
V
I
Ta=25°C
V
f=200MHz
10 20
Ta=25°C
f=1MHz
I
C
E
CE
CE
=10mA
C
=0A
(mA)
=10V
=12V
5
CB
(V)
2/3
50
50
10