IMX8T108 Rohm Semiconductor, IMX8T108 Datasheet - Page 2

• Manufacturer Part Number: IMX8T108
• Description: TRANS DUAL NPN 120V 50MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMX8T108

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 120V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 180
• Gain Bandwidth Product Ft: 140 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMX8T108TR

Transistors
Electrical characteristics
Fig.1 Ground emitter output characteristics
Fig.4 Collector-emitter saturation voltage
10
0.05
0.02
0
20
10
8
6
4
2
0.5
0.2
0.1
Fig.7 Collector output capacitance
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
1
COLLECTOR TO BASE VOLTAGE : V
−0.5
vs. collector current ( )
I
B
COLLECTOR CURRENT : I
25.0
vs. collector-base voltage
22.5
20.0
17.5
15.0
12.5
10.0
=0µA
7.5
5.0
2.5
4
2
1
8
I
2
5
C
/I
B
= 50
10
20
12
10
5
20
10
C
16
Ta=25°C
Ta=25°C
(mA)
f=1MHz
I
E
=0A
20
CB
CE
50
(V)
(V)
20
Fig.2 Ground emitter propagation characteristics
Fig.5 Collector-emitter saturation voltage
0.5
0.2
0.1
50
20
10
20
10
5
2
1
0.05
0.02
5
2
1
0
0.5
0.2
0.1
−0.5
BASE TO EMITTER VOLTAGE : V
Fig.8 Emitter input capacitance
1
EMITTER TO BASE VOLTAGE : V
0.2
vs. collector current (
COLLECTOR CURRENT : I
0.4
2
vs. emitter-base voltage
1
0.6
2
5
0.8 1.0 1.2 1.4 1.6
10
5
20
)
10
V
C
Ta=25°C
f=1MHz
I
C
CE
(mA)
=0A
BE
EB
I
= 6V
C
/I
20
(V)
(V)
B
= 10
50
500
200
100
Fig.6 Gain bandwidth product vs. emitter current
50
0.2
Fig.3 DC current gain vs. collector current
500
200
100
50
−0.5
V
COLLECTOR CURRENT : I
CE
0.5
= 6V
COLLECTOR CURRENT : I
−1
1
−2
Rev.A
2
−5
5
−10 −20
10
C
IMX8
20
(mA)
Ta = 25°C
E
5 V
V
(mA)
CE
= 1V
−50
3 V
2/2
50