EMX2T2R Rohm Semiconductor, EMX2T2R Datasheet - Page 2

• Manufacturer Part Number: EMX2T2R
• Description: TRANS DUAL NPN 50V 150MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMX2T2R

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Emt6 Npn/npn: Module Configuration
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz
• Module Configuration: Dual
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: EMX2T2R; EMX2T2RTR

Transistors
∗Transition frequency of the device.
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Collector-emitter breakdown voltage
Transition frequency
Fig.1
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
0.5
0.2
0.1
500
200
100
50
20
10
50
20
10
5
2
1
0.2
0
BASE TO EMITTER VOLTAGE : V
Ta=25°C
Fig.4 DC current gain vs.
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
0.5 1
collector current ( Ι )
Parameter
2
5 10 20
V
CE
=5V
3V
1V
C
50 100 200
(mA)
V
CE
=6V
BE
(V)
Symbol
V
BV
BV
BV
I
Cob
I
CE(sat)
h
CBO
EBO
COLLECTOR TO EMITTER VOLTAGE : V
f
500
200
100
FE
CBO
CEO
T
100
EBO
50
20
10
80
60
40
20
Fig.2
0.2
0
0
Ta=25°C
Fig.5 DC current gain vs.
0.5 1
COLLECTOR CURRENT : I
0.4
Grounded emitter output
characteristics ( Ι )
Min.
120
60
50
collector current ( ΙΙ )
7
−
−
−
−
−
2
0.8
Ta=100°C
5
−55°C
Typ.
180
10 20
25°C
−
−
−
−
−
−
−
2
1.2
50 100 200
C
Max.
1.6
(mA)
560
V
0.1
0.1
0.4
3.5
−
−
−
−
CE
0.50mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
= 5V
B
=0A
CE
(V)
2.0
MHz
Unit
µA
µA
pF
V
V
V
V
EMX2 / UMX2N / IMX2
−
Fig. 6 Collector-emitter saturation
0.05
0.02
0.01
COLLECTOR TO EMITTER VOLTAGE : V
0.5
0.2
0.1
I
I
I
V
V
I
V
V
V
C
C
E
C
10
CB
EB
CE
CE
CB
=50µA
=1mA
=50µA
/I
8
6
4
2
0
0.2
0
Fig.3
B
=60V
=7V
=6V, I
=12V, I
=12V, I
=50mA/5mA
Ta=25°C
voltage vs. collector current
0.5 1
COLLECTOR CURRENT : I
C
=1mA
E
E
4
= −2mA, f=100MHz
=0mA, f=1MHz
Grounded emitter output
characteristics ( ΙΙ )
Conditions
I
C
2
/I
Rev.A
B
=50
8
20
10
5 10
30µA
27µA
24µA
21µA
18µA
15µA
12µA
I
B
9µA
6µA
3µA
=0A
12
20
C
∗
50 100 200
(mA)
16
Ta=25°C
CE
2/3
(V)
20