ZXTD2M832TA Diodes Zetex, ZXTD2M832TA Datasheet - Page 4

• Manufacturer Part Number: ZXTD2M832TA
• Description: TRANSISTOR DUAL PNP 20V 8MLP
• Manufacturer: Diodes Zetex

Specifications of ZXTD2M832TA

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 3.5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 350mA, 3.5A
• Current - Collector Cutoff (max): 25nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 1.7W
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTD2M832TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZXTD2M832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
-7.5
300
300
150
150
-25
-20
15
4
-1.01
-0.87
TYP.
-170
-190
-240
-225
475
450
230
180
670
-35
-25
-19
8.5
30
21
40
-1.075 V
MAX.
-0.95
-220
-250
-350
-300
-25
-25
-25
-30
30
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
MHz
pF
ns
ns
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
ISSUE 2 - JANUARY 2007
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
CC
=-100 A
=-100 A
=-10mA*
=-0.1A, I
=-1A, I
=-1.5A, I
=-2.5A, I
=-3.5A, I
=-3.5A, I
=-3.5A, V
=-10mA, V
=-0.1A, V
=-2A, V
=-6A, V
=-50mA, V
=I
=-6V
=-20V
=10V, f=1MHz
=-10V, I
B2
=-16V
=20mA
B
CE
CE
=-20mA*
B
B
B
B
B
CE
CE
=-10mA*
=-50mA*
=-150mA*
=-350mA*
=350mA*
=-2V*
=-2V*
C
CE
CE
=1A
=-2V*
=-2V*
=-2V*
=-10V