MMDT2222A-7-F Diodes Inc, MMDT2222A-7-F Datasheet - Page 3

• Manufacturer Part Number: MMDT2222A-7-F
• Description: TRANS NPN BIPOL DUAL 40V SOT363
• Manufacturer: Diodes Inc

Specifications of MMDT2222A-7-F

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: MMDT2222A-FDITR

DS30125 Rev. 12 - 2
1,000
100
100
1.0
5.0
10
30
10
20
0.5
0.4
0.3
0.2
0.1
1
0.1
1
0
1
Fig. 5, Typical Collector-Emitter Saturation Voltage
I
I
C
B
Fig. 7, Typical Gain Bandwidth Product
Fig. 3, Typical Capacitance Characteristics
= 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
R
vs. Collector Current
vs. Collector Current
1.0
10
10
T = 150°C
A
C
ibo
T = 25°C
100
A
10
f = 1MHz
C
obo
T = -50°C
A
1,000
100
50
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Fig. 6, Typical Base-Emitter Voltage vs. Collector Current
1.0
2.0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0
0.1
V
Fig. 4, Typical Collector Saturation Region
I = 1mA
CE
C
= 5V
I , COLLECTOR CURRENT (mA)
0.01
C
I , BASE CURRENT (mA)
I = 10mA
B
C
1
0.1
I = 30mA
C
I = 100mA
C
T = 25°C
T = 150°C
A
A
1
T = -50°C
I = 300mA
A
C
10
10
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MMDT2222A
100
100