TN1215-600G STMicroelectronics, TN1215-600G Datasheet - Page 4

SCR 12A 15MA 600V D2PAK

TN1215-600G

Manufacturer Part Number
TN1215-600G
Description
SCR 12A 15MA 600V D2PAK
Manufacturer
STMicroelectronics
Datasheet

Specifications of TN1215-600G

Scr Type
Standard Recovery
Voltage - Off State
600V
Voltage - Gate Trigger (vgt) (max)
1.3V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
8A
Current - On State (it (rms)) (max)
12A
Current - Gate Trigger (igt) (max)
15mA
Current - Hold (ih) (max)
30mA
Current - Off State (max)
5µA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 145A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current - On State (it (rms) (max)
12A
Breakover Current Ibo Max
146 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
5 uA
Forward Voltage Drop
1.5 V
Gate Trigger Voltage (vgt)
1.3 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
30 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6768-5
TN1215-600G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN1215-600G
Manufacturer:
ST
Quantity:
1 000
Part Number:
TN1215-600G
Manufacturer:
ST
0
Part Number:
TN1215-600G-TR
Manufacturer:
STM
Quantity:
125
Part Number:
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Manufacturer:
ST
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Part Number:
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Company:
Part Number:
TN1215-600G-TR
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0
Characteristics
4/12
Figure 3.
Figure 5.
Figure 7.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
0.10
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
-20
(A)
= 180°
th(j-a)
I
GT
Average and D.C. on-state current
versus ambient temperature
(device mounted on FR4 with
recommended pad layout) (DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration
(recommended pad layout, FR4 PC
board for DPAK)
Relative variation of gate trigger
current and holding current versus
junction temperature for TN12 and
TYNx12 series
j
25
/R
1E-1
DPAK
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D PAK
D.C.
2
20
]
50
1E+0
j
D PAK
T
40
2
T (°C)
amb
t (s)
j
p
DPAK
(°C)
60
75
1E+1
TO-220AB / IPAK
80
100
100
I
H
1E+2
& I
L
120
5E+2
125
140
Figure 4.
Figure 6.
Figure 8.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.5
0.2
0.1
1E-2
1E-3
-40
I [R
I
K=[Z
H
GT H L
,I ,I [T ] /
GK
th(j-c)
-20
] / I [
H
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS12
series
Relative variation of holding
current versus gate-cathode
resistance (typical values) for TS12
series
j
/R
I
GT
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
1E-1
1E-2
TN12, TS12 and TYNx12 Series
]
20
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
R
GK
I
H
& I
= 1k
100
L
T
j
= 25°C
120
1E+0
1E+1
140

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