TS420-600B-TR STMicroelectronics, TS420-600B-TR Datasheet - Page 2

• Manufacturer Part Number: TS420-600B-TR
• Description: SCR 600V 8A DPAK
• Manufacturer: STMicroelectronics

Specifications of TS420-600B-TR

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 2.5A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 30A, 33A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3276-2

Characteristics
1
Table 2.
Table 3.
2/11
Symbol
Symbol
I
P
T(RMS)
IT
V
I
dI/dt
T
t
I
G(AV)
TSM
RGM
t
GT
GM
I
T
(AV)
Q
stg
²
t
j
Gate controlled turn on time
Circuit controlled turn off time
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
²
G
t Value for fusing
Characteristics
Absolute ratings (limiting values)
Device timings
= 2 x I
Parameter
GT
, t
r
100 ns
I
dI
V
V
dV
TM
Parameter
D
R
G
D
/dt = 0.2 A/µs, R
= 67% V
= 10 V, dI
= 10 A, V
/dt = 2 V/µs, R
Doc ID 5203 Rev 4
DRM(max)
T
D
/dt = 10 A/µs,
Test conditions
= V
t
t
t
F = 60 Hz
t
p
p
p
p
= 8.3 ms
= 10 ms
= 10 ms
= 20 µs
G
DRM(max)
G
= 1 k
, T
= 1 k , T
j
= 125 °C, I
, I
GT
T
T
T
T
T
T
T
j
= 25 °C
l
l
j
j
j
j
j
= 10 mA,
= 115 °C
= 115 °C
= 25 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
TM
= 8 A,
- 40 to + 150
- 40 to + 125
0.5 (Typ.)
Value
60 (Typ.)
2.5
4.5
1.2
0.2
33
30
50
Value
4
5
TS420
Unit
A/µs
A
Unit
W
°C
A
A
A
A
V
2
µs
S