BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet - Page 5

• Manufacturer Part Number: BFR 740L3RH E6327
• Description: TRANS RF BIPO NPN 30MA TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 740L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 24.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR740L3RHE6327INTR; BFR740L3RHE6327XT; SP000252393

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
CE
CE
30
27
24
21
18
15
12
45
40
35
30
25
20
15
10
= parameter, f = 1.8 GHz
= 3 V, I
9
6
3
0
5
0
0
0
S
5
1
= Z
C
= 25 mA
ma
10
L
= 50 Ω )
, G
2
|S
G
ms
15
21
ms
|
I
f [GHz]
2
C
[mA]
3
= ƒ (f)
20
4
1.00V
25
3
= ƒ (I
5
30
4.00V
3.00V
2.00V
C
G
ma
)
35
6
5
Transition frequency f
V
Power gain G
V
f = parameter
CE
CE
50
45
40
35
30
25
20
15
10
34
32
30
28
26
24
22
20
18
16
14
12
10
= parameter, f = 2 GHz
= 3 V
5
0
0
0
5
5
ma
10
10
, G
ms
15
15
I
I
C
C
[mA]
[mA]
= ƒ (I
T
= ƒ (I
20
20
BFR740L3RH
C
)
25
25
C
)
2010-09-08
2 V to 4V
30
30
1.00V
0.75V
0.50V
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
35
35