NE68033-A CEL, NE68033-A Datasheet
NE68033-A
Specifications of NE68033-A
Related parts for NE68033-A
NE68033-A Summary of contents
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... GHz 2 GHz • HIGH ASSOCIATED GAIN: 12 GHz 8 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is de- signed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications GHz ...
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... NE68033 NE68035 2SC3585 2SC3587 1.6 1.8 3.0 1.7 2.4 2.1 2.6 11.0 9.0 12.5 4 18.5 10.9 16.2 6.7 10.2 ...
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... GHz GHz 50 70 100 (mA POWER DERATING CURVES 400 300 NE68035 NE68033 NE68039 200 NE68019 100 0 50 100 150 0 Ambient Temperature, T (°C) A NE68033 INSERTION GAIN vs. COLLECTOR CURRENT GHz 10 NE68033 100 Collector Current, I (mA) C NE68035 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY ...
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... COLLECTOR CURRENT GHz GHz Collector Current COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.7 0.5 0.3 0.2 0 Collector to Base Voltage, V (TA = 25° (mA (mA) NE68033 NE68035 (V) CB NE68033 NOISE FIGURE vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Collector Current, I (mA ...
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... 1000 21 0.44 36 0.31 2000 47 0.43 3000 4000 81 0.27 125 0.14 NE68033 TYPICAL NOISE PARAMETERS (T = 25°C) FREQ. A (MHz 2 ANG Rn/50 500 800 18 0.47 1000 33 0.33 1500 41 0.31 2000 58 0. 0.22 500 86 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68018 V = 2.5 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1.5 2 0.1 GHz -. GHz -.4 -.6 -1.5 -.8 -1 NE68019 V = 2.5 V, ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68030 V ...
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... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz S 11 -.2 5 GHz -.4 -.6 -1.5 -.8 -1 NE68033 FREQUENCY S 11 (MHz) MAG ANG 100 .967 -8.2 400 .903 -29.4 800 .732 -53.1 1000 .658 -62.8 1500 .478 -83.0 2000 .349 -100.5 2500 .242 -114 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz -. -.4 5 GHz -.6 -1.5 -.8 -1 NE68035 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 1 0.1 GHz 6 GHz -.2 -.4 -.6 -1.5 -.8 -1 NE68039 V = ...
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NE68018 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
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NE68019 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
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NE68030 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR ...
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... NE68033 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. XTF NR 1.05 VTF VAR Infinity ITF IKR Infinity PTF ISC 0.6 XTB RB 17.9 XTI RBM 1.02 ...
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NE68035 NONLINEAR MODEL SCHEMATIC RB_PKG BASE 0.1 ohms CBEX_PKG 0.1pF BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS VAF 11.9 VJS IKF 0.027 MJS ISE 1.0e- 2. ...
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OUTLINE DIMENSIONS (Units in mm) NE68000 (CHIP) (Chip Thickness: 160 μm) 0.35 0.01 0.13 BASE EMITTER 30 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0.65 0.60 0. +0.10 0.4 -0.05 ...
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OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2 2.9 ± 0.2 0.95 1 +0.2 1.5 -0.1 1.1 to 1.4 0 0.1 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 ...
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... ORDERING INFORMATION PART NUMBER QUANTITY NE68800 100 NE68018-T1-A 3000 1 NE68019-T1-A 3000 1 NE68030-T1-A 3000 1 NE68033-T1B-A 3000 1 NE68035 1 NE68039-T1-A 3000 1 NE68039R-T1 3000 Note: 1. Lead material: Cu Lead plating: SnBi – 2.5%Bi Typ. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...
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