BFR 750L3RH E6327 Infineon Technologies, BFR 750L3RH E6327 Datasheet

TRANS RF BIPO NPN 90MA TSLP-3-9

BFR 750L3RH E6327

Manufacturer Part Number
BFR 750L3RH E6327
Description
TRANS RF BIPO NPN 90MA TSLP-3-9
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 750L3RH E6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
37GHz
Noise Figure (db Typ @ F)
0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain
21dB
Power - Max
360mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 60mA, 3V
Current - Collector (ic) (max)
90mA
Mounting Type
Surface Mount
Package / Case
TSLP-3-9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR750L3RHE6327INTR
BFR750L3RHE6327XT
SP000252588
NPN Silicon Germanium RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR750L3RH
1
Pb-containing package may be available upon special request
High gain ultra low noise RF transistor
Provides outstanding performance for a wide range
Ideal for WLAN and all 5-6 GHz applications
High OIP
High maximum stable and available gain
150 GHz f
Extremly small and flat leadless package,
Pb-free (RoHS compliant) package
Qualified according AEC Q101
of wireless applications up to 10 GHz
G
reduced height 0.32 mm max.
ms
= 21 dB at 1.8 GHz, G
3
T
and P
-Silicon Germanium technology
-1dB
for driver stages
ma
Marking
R8
= 11.5 dB at 6 GHz
1)
1=B
1
Pin Configuration
2=C
3=E
1
BFR750L3RH
Package
TSLP-3-9
2
2007-04-26
3

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BFR 750L3RH E6327 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor* High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications GHz Ideal for WLAN and all 5-6 GHz applications High OIP and P for driver ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0° 0°C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 96°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter 2) Junction ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz, emitter grounded CB ...

Page 4

... Package Equivalent Circuit: Ccb_chip Rbc_chip Cbc_chip Lbb_pack Lbb_chip Transistor Model Ree_chip Lee_pack Cbe_pack For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com BF = 753 IKF = 292 IKR = 1.33 ...

Page 5

Total power dissipation P 400 350 300 250 200 150 100 [°C] S Permissible Pulse Load totmax totDC D=t ...

Page 6

Transition frequency parameter GHz [mA] C Power gain ...

Page 7

Package Outline Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.6 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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