ZUMT918TA Diodes Zetex, ZUMT918TA Datasheet
ZUMT918TA
Manufacturer Part Number
ZUMT918TA
Description
TRANSISTOR NPN 15V 100MA SC70-3
Manufacturer
Diodes Zetex
Datasheet
1.ZUMT918TA.pdf
(1 pages)
Specifications of ZUMT918TA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
6dB @ 60MHz
Gain
15dB
Power - Max
330mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3mA, 1V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
ZUMT918TR
SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse Width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Input Capacitance
Noise Figure
Common Emitter
Power Gain
amb
=25°C
SYMBOL
V
V
V
V
V
h
f
C
C
N
G
CBO
T
FE
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
pe
T5
MIN.
30
15
3
20
600
amb
TYP.
15
SYMBOL
V
V
V
I
P
T
C
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
0.05
0.4
1.0
3.0
1.7
1.6
6.0
UNIT
V
V
V
V
V
MHz
pF
pF
pF
dB
dB
A
-55 to +150
VALUE
100
330
30
15
3
CONDITIONS.
I
I
I
V
I
I
I
I
f=100MHz
V
V
V
V
f=60MHz, R
V
f=200MHz
C
C
E
C
C
C
C
ZUMT918
=10 A, I
CB
CB
CB
EB
CE
CB
=1 A, I
=3mA, I
=10mA, I
=3mA, V
=4mA, V
=10mA, I
=6V, I
=15V, I
=0V, f=1MHz
=10V, f=1MHz
=12V, I
=0.5V,f=1MHz
E
C
=0
B
C
=1mA
E
CE
CE
C
=0*
B
=0
B
=0
=6mA
=1mA
=1mA
G
=1V
=10V
=400
UNIT
mW
mA
°C
V
V
V
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