BFR93A,215 NXP Semiconductors, BFR93A,215 Datasheet - Page 8

• Manufacturer Part Number: BFR93A,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 90
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 12V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 40
• Frequency (max): 6GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1651-2; 933551570215; BFR93A T/R

NXP Semiconductors
1997 Oct 29
handbook, full pagewidth
handbook, full pagewidth
NPN 6 GHz wideband transistor
I
I
C
C
= 30 mA; V
= 30 mA; V
CE
CE
= 8 V; Z
= 8 V; T
o
amb
= 50 ; T
= 25 C.
+ j
– j
Fig.18 Common emitter forward transmission coefficient (S
180 o
amb
Fig.17 Common emitter input reflection coefficient (S
0
0.2
0.2
150 o
= 25 C.
150 o
0.5
0.5
0.2
120 o
100
120 o
1200
800
0.5
1200 MHz
500
1000
1000
200
200
100 MHz
90 o
90 o
8
1
1
1
500
800
10
2
60 o
60 o
20
2
2
5
10
MBB259
30 o
30 o
MBB261
30
5
5
11
10
10
∞
).
0 o
21
).
ϕ
ϕ
Product specification
BFR93A