BFS17A,215 NXP Semiconductors, BFS17A,215 Datasheet - Page 2

• Manufacturer Part Number: BFS17A,215
• Description: TRANS NPN 25MA 15V 3GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 2.8GHz
• Noise Figure (db Typ @ F): 2.5dB @ 800MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 2800 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 25
• Frequency (max): 2.8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1653-2; 933750250215; BFS17A T/R

NXP Semiconductors
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
 It is intended for RF applications such as oscillators
PINNING
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. T
September1995
V
V
I
P
f
G
F
V
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
C
T
C
CM
in TV tuners.
stg
j
CBO
CEO
tot
O
CBO
CEO
EBO
tot
NPN 3 GHz wideband transistor
UM
PIN
1
2
3
s
is the temperature at the soldering point of the collector pin.
base
emitter
collector
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
maximum unilateral power gain
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
open base
up to T
I
I
open base
open collector
up to T
open emitter
T
I
T
d
R
f
open emitter
C
C
C
(p+qr)
im
amb
amb
L
= 25 mA; V
= 14 mA; V
= 2 mA; V
= 75 ; T
= 60 dB; I
= 25 C
= 25 C
= 793.25 MHz
s
s
= 70 C; note 1
= 70 C; note 1
2
CONDITIONS
CE
CONDITIONS
amb
handbook, halfpage
CE
CE
C
= 5 V; f = 800 MHz;
Marking code: E2p.
= 14 mA; V
= 25 C;
= 5 V; f = 500 MHz;
= 10 V; f = 800 MHz
CE
= 10 V;
Top view
1
Fig.1 SOT23.




2.8
13.5
2.5
150






65

TYP.
MIN.
3
MSB003
Product specification
2
25
15
25
300




25
15
2.5
25
50
300
+150
150
MAX.
MAX.
BFS17A
V
V
mA
mW
GHz
dB
dB
mV
V
V
V
mA
mA
mW
C
C
UNIT
UNIT