MMBF102 Fairchild Semiconductor, MMBF102 Datasheet

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MMBF102

Manufacturer Part Number
MMBF102
Description
JFET N-CHANNEL SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBF102

Transistor Type
N-Channel JFET
Voltage - Rated
25V
Current Rating
20mA
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
25V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Power Dissipation Pd
225mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Peak Reflow Compatible (260 C)
Yes
Reel Quantity
3000
Leaded Process Compatible
Yes
Drain Source Voltage Vds
15V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF102
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Part Number:
MMBF102
Manufacturer:
ON/安森美
Quantity:
20 000
MMBF102 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
MMBF102
N-Channel RF Amplifier
Features
• This device is designed primarily for electronic switching applications such as low On Resistance analog switching.
• Sourced from process 50
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
R
P
V
V
I
T
GF
D
qJA
J
DG
GS
Symbol
, T
Symbol
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Total Device Dissipation(T
Derate above 25°C
T
a
=25°C unless otherwise noted
T
Parameter
a
=25°C unless otherwise noted
C
=25°C)
Parameter
1
-55 to +150
Value
-25
25
10
Value
556
225
1.8
www.fairchildsemi.com
SOT - 23
Mark : 61Y
April 2008
Units
mW/°C
mA
Unit
°C/W
°C
V
V
mW

Related parts for MMBF102

MMBF102 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient qJA P Total Device Dissipation(T D Derate above 25°C *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter =25° ...

Page 2

... GS On Characteristics * I Zero-Gate Voltage Drain Current DSS gfs Forward Transconductance Small Signal Chracteristics C Common-Source Input Capacitance ISS Common-Source Reverse Transfer C RSS Capacitance © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 T =25°C unless otherwise noted a Test Conditions I = -1.0mA -15V 100°C ...

Page 3

... Typical Performance Characteristics © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 3 www.fairchildsemi.com ...

Page 4

... Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 4 www.fairchildsemi.com ...

Page 5

... Typical Performance Characteristics © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 5 www.fairchildsemi.com ...

Page 6

... Typical Performance Characteristics © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 6 www.fairchildsemi.com ...

Page 7

... Typical Performance Characteristics © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 7 www.fairchildsemi.com ...

Page 8

... Package Dimension © 2007 Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 SOT-23 8 www.fairchildsemi.com ...

Page 9

... Fairchild Semiconductor Corporation MMBF102 Rev. 1.0.0 9 www.fairchildsemi.com ...

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