MRF6VP3450HR6 Freescale Semiconductor, MRF6VP3450HR6 Datasheet - Page 3

• Manufacturer Part Number: MRF6VP3450HR6
• Description: MOSFET RF N-CH 450W NI-1230
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP3450HR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 860MHz
• Gain: 22.5dB
• Voltage - Rated: 110V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 50V
• Power - Output: 90W
• Package / Case: NI-1230
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Pulsed Performances (In Freescale Broadband Test Fixture, 50 ohm system) V
f = 470--860 MHz, 50 μsec Pulse Width, 2.5% Duty Cycle
Typical Two- -Tone Performances (In Freescale Broadband Test Fixture, 50 ohm system) V
f = 470--860 MHz, 100 kHz Tone Spacing
Power Gain
Drain Efficiency
Input Return Loss
P
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
out
(f = 470--860 MHz)
@ 1 dB Compression Point, Pulsed CW
Characteristic
(T
A
= 25°C unless otherwise noted) (continued)
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
Symbol
P1dB
G
G
IM3
IRL
IRL
η
η
ps
ps
D
D
DD
= 50 Vdc, I
DD
Min
—
—
—
—
—
—
—
—
= 50 Vdc, I
DQ
= 1200 mA, P
DQ
20.5
Typ
520
--29
50
22
44
--3
--2
= 1400 mA, P
Max
out
—
—
—
—
—
—
—
—
= 520 W,
out
= 450 W PEP,
Unit
dBc
dB
dB
dB
dB
W
%
%
3