MRF9045NR1 Freescale Semiconductor, MRF9045NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF9045NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF9045NR1

• Transistor Type: N-Channel
• Frequency: 945MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 350mA
• Voltage - Test: 28V
• Power - Output: 45W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

MRF9045NR1
2
Table 5. Electrical Characteristics (T
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
DS
D
D
D
D
GS
GS
out
out
out
out
out
out
out
out
= 150 μAdc)
= 350 mAdc)
= 3 Adc)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
= 45 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
= 350 mA,
= 350 mA,
= 350 mA,
= 350 mA,
= 350 mA,
= 350 mA,
= 350 mA,
= 350 mA,
C
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
g
oss
η
η
iss
rss
fs
ps
ps
Min
17
38
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
3
0.22
Typ
2.8
3.7
1.7
- 31
- 14
- 31
- 13
70
38
19
41
19
41
—
—
—
4
Freescale Semiconductor
Max
0.4
- 28
10
—
—
—
—
—
—
- 9
—
—
—
—
1
1
4
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
pF
pF
pF
dB
dB
dB
dB
%
%
S