PD84006L-E STMicroelectronics, PD84006L-E Datasheet - Page 7

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PD84006L-E

Manufacturer Part Number
PD84006L-E
Description
TRANS RF POWER LDMOST
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD84006L-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
15dB
Voltage - Rated
25V
Current Rating
5A
Current - Test
150mA
Voltage - Test
7.5V
Power - Output
2W
Package / Case
PowerFLAT™ (5 x 5)
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
- 0.5 V, + 15 V
Continuous Drain Current
5 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Broadband Performances
POUT = 6 W with 13 dB gain @ 870 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
497-8288

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD84006L-E
Manufacturer:
ST
0
Part Number:
PD84006L-E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
PD84006L-E
Quantity:
25
PD84006L-E
Figure 7.
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7
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5
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1
740 760 780 800 820 840 860 880 900 920 940 960
Output power vs frequency and
supply voltage Pin = 24 dBm,
Idq = 200 mA
Vcc=5V
Vcc=6V
Frequency (MHz)
Vcc=7.2V
Vcc=9V
Doc ID 13786 Rev 4
Typical performance
7/16

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