BLF6G10-200RN,112 NXP Semiconductors, BLF6G10-200RN,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10-200RN,112
• Description: TRANSISTOR POWER LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-200RN,112

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 20dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 40W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063283112

NXP Semiconductors
8. Test information
BLF6G10-200RN_10LS-200RN_2
Product data sheet
Fig 4.
Fig 6.
input
50 Ω
(dB)
G
p
22
21
20
19
18
0
V
carrier spacing 10 MHz.
efficiency as function of average load power;
typical values
The drawing is not to scale.
Test circuit for operation at 800 MHz
2-carrier W-CDMA power gain and drain
DS
G
η
D
= 28 V; I
p
7.4 2-carrier W-CDMA
V
Dq
GG
20
= 1400 mA; f = 881 MHz (±5 MHz);
R1
C1
40
P
L(AV)
C3
001aaj417
(W)
Rev. 02 — 21 January 2010
R2
C2
60
40
30
20
10
0
(%)
η
D
C7
C9
Fig 5.
ACPR
IMD3,
(dBc)
C8
C10
−35
−40
−45
−50
−55
C5
C6
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
C11
C12
DS
BLF6G10(LS)-200RN
= 28 V; I
C13
C14
IMD3
ACPR
Dq
20
C17
C18
= 1400 mA; f = 881 MHz (±5 MHz);
R3
L1
Power LDMOS transistor
40
V
DD
P
L(AV)
© NXP B.V. 2010. All rights reserved.
C15
C16
001aah522
(W)
60
001aah523
output
50 Ω
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