BLF7G22L-130,112 NXP Semiconductors, BLF7G22L-130,112 Datasheet

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BLF7G22L-130,112

Manufacturer Part Number
BLF7G22L-130,112
Description
TRANSISTOR PWR LDMOS SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G22L-130,112

Transistor Type
LDMOS
Frequency
2GHz ~ 2.2GHz
Gain
18.5dB
Voltage - Rated
65V
Voltage - Test
28V
Power - Output
44.8W
Package / Case
SOT502A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Current - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063499112
1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
RF performance at T
[1]
Mode of operation
2-carrier W-CDMA
BLF6G20-230PRN;
BLF6G20S-230PRN
Power LDMOS transistor
Rev. 02 — 9 February 2010
Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 65 W
Power gain = 17.5 dB
Efficiency = 32 %
ACPR = −32 dBc
Typical performance
case
= 25
°
C in a common source class-AB production test circuit.
f
(MHz)
1805 to 1880
Dq
of 2000 mA:
V
(V)
28
DS
P
(W)
65
L(AV)
Product data sheet
G
(dB)
17.5
p
η
(%)
32
D
ACPR
(dBc)
−31
[1]

Related parts for BLF7G22L-130,112

BLF7G22L-130,112 Summary of contents

Page 1

BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. RF performance at T ...

Page 2

... NXP Semiconductors 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-230PRN (SOT539A BLF6G20S-230PRN (SOT539B [1] Connected to flange 3. Ordering information Table 3. Type number BLF6G20-230PRN BLF6G20S-230PRN - BLF6G20-230PRN_20S-230PRN_2 Product data sheet ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T case Thermal characteristics Table 5. Symbol R th(j-case) 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS DS(on) BLF6G20-230PRN_20S-230PRN_2 Product data sheet Limiting values Parameter ...

Page 4

... NXP Semiconductors 7. Application information Table 7. Mode of operation: 2-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH performance at V class-AB production test circuit Symbol η D ACPR Table 8. Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 2000 mA Symbol Parameter ...

Page 5

... NXP Semiconductors 7.2 Graphs 7.2.1 One tone CW Fig 1. BLF6G20-230PRN_20S-230PRN_2 Product data sheet (dB η 100 2000 mA One-tone CW power gain and drain efficiency as functions of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2010 BLF6G20(S)-230PRN Power LDMOS transistor 001aal412 60 ...

Page 6

... NXP Semiconductors 7.2.2 2-carrier W-CDMA (dB η 2000 mA Fig 2. 2-carrier W-CDMA power gain and drain efficiency as functions of load power; typical values Fig 4. BLF6G20-230PRN_20S-230PRN_2 Product data sheet 001aal413 40 η D APCR (%) (dBc ( MHz low ( MHz high ( MHz low ( MHz high Fig 3. 400 PAR ...

Page 7

... NXP Semiconductors 8. Test information BLF6G20LS-230PRN INPUT REV2 R04950 NXP See Table 9 for list of components. The drawing is not to scale. Fig 5. Component layout Table 9. See Figure 5 Component C1, C2 C7, C8 C9, C10 C11 R1, R2 BLF6G20-230PRN_20S-230PRN_2 Product data sheet List of components for component layout. Description ...

Page 8

... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 11.81 4.7 0.18 31.55 31.52 mm 11.56 4.2 0.10 30.94 30.96 0.185 0.465 1.242 1.241 0.007 inches 0.455 0.165 ...

Page 9

... NXP Semiconductors Earless flanged balanced LDMOST ceramic package; 4 leads Dimensions (1) Unit max 4.7 11.81 0.18 31.55 mm nom min 4.2 11.56 0.10 30.94 max 0.185 0.465 0.007 1.242 mm nom min 0.165 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 10

... NXP Semiconductors 10. Abbreviations Table 10. Acronym 3GPP CCDF DPCH LDMOS LDMOST PAR PDPCH RF W-CDMA 11. Revision history Table 11. Revision history Document ID BLF6G20-230PRN_20S-230PRN_2 Modifications BLF6G20-230PRN_1 BLF6G20-230PRN_20S-230PRN_2 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Dedicated Physical CHannel Laterally Diffused Metal-Oxide Semiconductor ...

Page 11

... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

Page 12

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 13. Contact information For more information, please visit: ...

Page 13

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 4 7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2.1 One tone 7.2.2 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information ...

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