BLF6G38-10G,118 NXP Semiconductors, BLF6G38-10G,118 Datasheet - Page 3

• Manufacturer Part Number: BLF6G38-10G,118
• Description: IC WIMAX 3.8GHZ 2-LDMOST
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10G,118

• Package / Case: SOT957A
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 3.1A
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 2W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061847118; BLF6G38-10G /T3; BLF6G38-10G /T3

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Symbol
V
V
I
T
T
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
C
D
DSS
DSX
GSS
j
fs
stg
j
DS
GS
(BR)DSS
GS(th)
th(j-case)
DS(on)
rs
= 25 C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from
junction to case
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Conditions
T
P
Conditions
case
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
= 10 W (CW)
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 0.6 A
= 80 C;
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
= 0.18 mA
+ 3.75 V;
+ 3.75 V;
DS
= 18 mA
= 0.9 A
Type
BLF6G38-10
BLF6G38-10G
= 28 V
= 28 V;
= 0 V
WiMAX power LDMOS transistor
Min
65
1.4
-
2.7
-
0.8
328
-
Min
-
-
-
Typ
-
1.9
-
-
-
-
-
3.6
© NXP B.V. 2009. All rights reserved.
0.5
65
Typ
4.0
4.0
Max
65
+13
3.1
+150
200
Max
-
2.4
1.4
-
140
-
1256
-
Unit
K/W
K/W
3 of 15
Unit
V
V
A
Unit
V
V
A
nA
S
m
pF
C
C
A