BF545A,215 NXP Semiconductors, BF545A,215 Datasheet - Page 10

MOSFET N-CH 30V 10MA SOT23

BF545A,215

Manufacturer Part Number
BF545A,215
Description
MOSFET N-CH 30V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF545A,215

Package / Case
SST3 (SOT-23-3)
Current Rating
6.5mA
Transistor Type
N-Channel JFET
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Continuous Drain Current
6.5 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 30 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Frequency
-
Gain
-
Noise Figure
-
Current - Test
-
Voltage - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933912900215::BF545A T/R::BF545A T/R
Philips Semiconductors
9397 750 13391
Product data sheet
Fig 16. Gate current as a function of junction
Fig 18. Typical input capacitance.
I
(pA)
(pF)
C
GSS
10
iss
10
10
10
1
3
2
1
0
3
2
1
V
temperature; typical values.
V
50
10
DS
DS
= 0 V; V
= 15 V; T
8
0
GS
j
= 25 C.
= 20 V.
6
50
4
100
2
T
V
j
GS
( C)
mbb453
mbb451
(V)
150
Rev. 03 — 5 August 2004
0
BF545A; BF545B; BF545C
Fig 17. Reverse transfer capacitance as a function of
Fig 19. Common-source input admittance; typical
N-channel silicon junction field-effect transistors
(mS)
C
(1) b
(2) g
(pF)
y
10
10
rss
is
10
0.8
0.6
0.4
0.2
10
1
0
1
2
1
2
V
gate-source voltage; typical values.
V
values.
10
10
is
is
DS
DS
.
.
= 15 V; T
= 10 V; I
8
D
j
= 25 C.
= 1 mA; T
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
amb
2
= 25 C.
4
(1)
(2)
f (MHz)
2
V
GS
mbb452
mbb468
(V)
10
0
3
10 of 15

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