BF1101WR,115 NXP Semiconductors, BF1101WR,115 Datasheet
BF1101WR,115
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BF1101WR,115 Summary of contents
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DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 DISCRETE SEMICONDUCTORS 1999 May 14 ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1 ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs STATIC CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate 1-source breakdown voltage (BR)G1-SS V gate 2-source breakdown voltage (BR)G2-SS V forward source-gate 1 voltage (F)S-G1 V forward source-gate 2 voltage (F)S-G2 V gate 1-source threshold voltage G1-S (th) ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs 20 handbook, halfpage I D (mA 0.4 0 Fig.5 Transfer characteristics; typical values. 100 handbook, halfpage V G2 (μ 0 Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. 1999 May 14 MGS299 handbook, halfpage G2 3 1.2 1 G1-S (V) MGS301 handbook, halfpage 3 ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs 20 handbook, halfpage I D (mA G2 Fig.9 Drain current as a function of gate 1 current; typical values. 20 handbook, halfpage kΩ 68 kΩ (mA G2 connected see Fig.21 Fig.11 Drain current as a function of gate and drain supply voltage; typical values. 1999 May 14 ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs 40 handbook, halfpage I G1 (μ 120 k (connected see Fig.21 Fig.13 Gate 1 current as a function of gate 2 voltage; typical values. 120 handbook, halfpage V unw (dBμV) 110 100 (3) (2) ( MHz unw ( k. ( 120 k Fig.15 Unwanted voltage for 1% cross-modulation as a function of gain reduction ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs 2 10 handbook, halfpage y is (mS − mA amb Fig.17 Input admittance as a function of frequency; typical values handbook, halfpage | (mS mA amb Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. 1999 May 14 MGS311 handbook, halfpage b is ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs handbook, full pagewidth R GEN 50 Ω Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 4.1 50 0.987 8.1 100 0.985 16.1 200 0.976 23.9 300 0.963 31.6 400 0.949 38.8 500 0.933 45.7 600 0.916 52.2 700 0.897 ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs PACKAGE OUTLINES Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B 1999 May scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R 1999 May scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES ...
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... NXP Semiconductors N-channel dual-gate MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.5 0.8 OUTLINE VERSION IEC SOT343R 1999 May scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...