2N5245 Fairchild Semiconductor, 2N5245 Datasheet

2N5245

Manufacturer Part Number

2N5245

Description

IC AMP RF N-CHAN 30V 10MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.2N5245.pdf (3 pages)

Specifications of 2N5245

Transistor Type

N-Channel JFET

Voltage - Rated

30V

Current Rating

15mA

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Output

Frequency

Gain

Noise Figure

Current - Test

Voltage - Test

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N-Channel RF Amplifier

• This device is designed for HF/VHF mixer/amplifier and applications

• Sourced from process 90.

Absolute Maximum Ratings*

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

* Pulse Test: Pulse

Thermal Characteristics

Off Characteristics

On Characteristics

Small Signal Characteristics

gfs

goss

GSS

DSS

where process 50is not adequate. Sufficient gain and low noise for

sensitive receivers.

Symbol

(BR)GSS

GS(off)

Symbol

, T

Symbol

STG

Gate-Source Breakdwon Voltage

Gate Reverse Current

Gate-Source Cutoff Voltage

Zero-Gate Voltage Drain Current *

Forward Transferconductance

Common- Source Output Conductance

300 s

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Parameter

=25 C unless otherwise noted

Parameter

=25 C unless otherwise noted

2N5245

= 1.0 A, V

= 15V, I

= 25V, V

= 15V, V

= 0V, V

Test Condition

= 1.0nA

= 15V, f = 1.0kHz

= 0

Max.

350

125

357

2.8

1. Gate 2. Source 3. Drain

-55 ~ 150

Ratings

-30

4500

Min.

-1.0

-30

TO-92

11000

Max.

-1.0

-0.6

mW/ C

Units

C/W

Rev. A, January 2004

Units

mhos

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2N5245 Summary of contents

Page 1

... Common- Source Output Conductance * Pulse Test: Pulse 300 s Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation 2N5245 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition 25V, V ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, January 2004 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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