PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 11

• Manufacturer Part Number: PD57018S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD57018S-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.5A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 18W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Forward Transconductance Gfs (max / Min): 1 S
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 31.7 W
• Maximum Operating Temperature: + 165 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-5306-5

PD57018-E
Table 8.
1. Only for PD57018-E
2. Only for PD57018S-E
FB1, FB2,FB3
Component
BOARD
L1, L2
R2
Test circuit component part list (continued)
1 kΩ, 1/8 W surface mount chip resistor
Shield bead surface mount EMI
Inductor, 5 turns air wound #22AWG, ID=0.059[1.49], nylon coated
magnet wire
Roger ultra lam 2000 THK 0.030”
Doc ID 12214 Rev 5
Description
ε
r
= 2.55 2oz ED Cu both sides
Test circuit
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