PD54008-E STMicroelectronics, PD54008-E Datasheet - Page 8

• Manufacturer Part Number: PD54008-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD54008-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 11.5dB
• Voltage - Rated: 25V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 7.5V
• Power - Output: 8W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 25V
• Output Power (max): 8W(Min)
• Power Gain (typ)@vds: 11.5dB
• Frequency (max): 500MHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 91@7.5VpF
• Output Capacitance (typ)@vds: 68@7.5VpF
• Reverse Capacitance (typ): 8.5@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5296-5

Typical performance
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Figure 10. Output power vs. bias current
Figure 12. Output power vs. drain voltage
Pout (W)
12
10
Pout (W)
14
12
10
8
6
4
2
8
6
4
2
0
0
5
6
200
480 MHz
7
520 MHz
400
IDQ (mA)
480 MHz
8
VDS (V)
500 MHz
500 MHz
600
9
10
IDQ = 150 mA
Pin = 0.6 W
800
Pin = 0.6 W
VDD = 7.5 V
11
520 MHz
Doc ID 12271 Rev 2
1000
12
Figure 11. Drain efficiency vs. bias current
Figure 13. Drain efficiency vs. drain voltage
Nd (%)
70
60
50
40
30
Nd (%)
70
60
50
40
30
0
5
6
200
500 MHz
7
400
IDQ (mA)
8
VDS (V)
480 MHz
PD54008-E, PD54008S-E
500 MHz
600
9
10
480 MHz
520 MHz
520 MHz
800
IDQ = 150mA
Pin = 0.6 W
Pin = .6 W
VDD = 7.5 V
11
1000
12