PD55025S-E STMicroelectronics, PD55025S-E Datasheet - Page 5

TRANS RF N-CH FET LDMOST PWRSO10

PD55025S-E

Manufacturer Part Number
PD55025S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55025S-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
14.5dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
200mA
Voltage - Test
12.5V
Power - Output
25W
Package / Case
PowerSO-10 Exposed Bottom Pad
Drain Source Voltage Vds
40V
Continuous Drain Current Id
7A
Power Dissipation Pd
79W
Operating Temperature Range
-65°C To +165°C
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
40V
Output Power (max)
25W(Min)
Power Gain (typ)@vds
14dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Forward Transconductance (typ)
2.5S
Input Capacitance (typ)@vds
86@12.5VpF
Output Capacitance (typ)@vds
60@12.5VpF
Reverse Capacitance (typ)
6.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-5302-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55025S-E
Manufacturer:
STMicroelectronics
Quantity:
2
Part Number:
PD55025S-E
Manufacturer:
ST
Quantity:
20 000
PD55025-E, PD55025S-E
3
Impedance
Figure 2.
Table 7.
Freq. (MHz)
Current conventions
Impedance data
175
480
500
520
Doc ID 12330 Rev 2
3.20 - j 4.41
1.01 - j 1.67
0.93 - j 1.53
0.88 - j 1.98
Z
IN
(Ω)
1.56 + j 2.14
1.06 + j 0.22
1.12 + j 0.20
1.07 + j 0.83
Z
DL
(Ω)
Impedance
5/23

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