PD57006-E STMicroelectronics, PD57006-E Datasheet - Page 9

• Manufacturer Part Number: PD57006-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57006-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 165 C
• Forward Transconductance Gfs (max / Min): 0.58 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 65V
• Threshold Voltage Vgs Typ: 5V
• Transistor Case Style: PowerSO-10RF
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6719-5; PD57006-E

PD57006-E
4.2
Figure 14. Output power vs
Figure 15. Output power vs input power
9
8
7
6
5
4
3
2
0
1
9
8
7
6
5
4
3
2
0
1
0
0
PD5706S-E
gate-source voltage
0.1
VGS, GATE-SOURCE VOLTAGE (V)
1
Pin, INPUT POWER (W)
945 M H z
0.2
925 M H z
2
960 M H z
945 MHz
925 MHz
0.3
V dd =28V
Id q=70m A
Vdd=28V
Pin= 23.6 dBm
3
960 MHz
Doc ID 12611 Rev 3
0.4
4
Figure 16. Input return loss vs output power
-10
-15
-20
-25
-5
0
0
V d d = 28V
Id q = 70m A
1
960 M H z
2
925 M H z
Pout, OUTPUT POWER (W)
3
4
945 M H z
Typical performance
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