PD85004 STMicroelectronics, PD85004 Datasheet - Page 3

• Manufacturer Part Number: PD85004
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD85004

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17dB
• Voltage - Rated: 40V
• Current Rating: 2A
• Current - Test: 50mA
• Voltage - Test: 13.6V
• Power - Output: 4W
• Package / Case: SOT-89
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to 15 V
• Continuous Drain Current: 2 A
• Power Dissipation: 6000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 2A
• Power Dissipation Pd: 6W
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8291

PD85004
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
CASE
= 25 °C)
-65 to +150
-0.5 to +15
Value
Value
150
40
21
2
6
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
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