BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 12

• Manufacturer Part Number: BLF574,112
• Description: TRANSISTOR RF LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF574,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 26.5dB
• Voltage - Rated: 110V
• Current Rating: 56A
• Current - Test: 1A
• Voltage - Test: 50V
• Power - Output: 400W
• Forward Transconductance Gfs (max / Min): 17 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 56 A
• Power Dissipation: 500 W
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 600W
• Power Gain (typ)@vds: 26.5@50VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 72@50VpF
• Reverse Capacitance (typ): 1.5@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4736; 934061965112

NXP Semiconductors
BLF574_2
Product data sheet
Fig 13. Power gain and drain efficiency as functions of
(dB)
G
p
30
28
26
24
22
0
V
f
peak envelope load power; typical values
2
DS
= 225.05 MHz.
= 50 V; I
100
8.2.2 2-Tone CW
Dq
200
= 1000 mA; f
Fig 12. Load power as function of source power; typical values
300
(1) P
V
1
400
DS
L(1dB)
= 224.95 MHz;
G
D
= 50 V; I
p
P
L(PEP)
= 56.43 dBm (440 W)
500
001aaj137
(W)
Dq
(dBm)
Rev. 02 — 24 February 2009
P
= 1000 mA; f = 225 MHz.
600
L
60
58
56
54
52
50
80
60
40
20
0
24
(%)
D
26
Fig 14. Third order intermodulation distortion as a
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
28
20
40
60
80
0
0
V
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
DS
ideal P
= 600 mA
= 800 mA
= 1000 mA
= 1200 mA
= 1400 mA
= 50 V; f
30
100
P
L
L
HF / VHF power LDMOS transistor
1
(1)
200
= 224.95 MHz; f
32
P
001aaj136
s
(dBm)
(1)
(2)
(3)
(4)
(5)
300
34
400
2
= 225.05 MHz.
P
L(PEP)
© NXP B.V. 2009. All rights reserved.
500
BLF574
001aaj138
(W)
600
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