BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 17

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
HF/VHF power MOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT121B
0.286
0.243
7.27
6.17
A
0.229
0.219
5.82
5.56
b
0.006
0.004
0.16
0.10
c
A
H
IEC
12.86
12.59
0.506
0.496
H
D
4
1
12.83
12.57
0.505
0.495
D 1
0.105
0.095
2.67
2.41
JEDEC
F
U 1
28.45
25.52
1.120
1.005
D 1
REFERENCES
D
q
H
Rev. 06 - 24 January 2007
0.130
0.120
3.30
3.05
p
0.175
0.154
4.45
3.91
EIAJ
Q
3
2
C
18.42
0.725
b
q
B
p
F
24.90
24.63
0.98
0.97
U 1
U 2
A
w 1
w 2
0.255
0.245
M
M
6.48
6.22
U 2
A
C
M
M
12.32
12.06
0.485
0.475
0
B
U 3
M
PROJECTION
EUROPEAN
scale
0.25
0.01
w 1
5
U 3
0.51
0.02
w 2
10 mm
Q
c
Product specification
45
ISSUE DATE
99-03-29
BLF177
17 of 19
SOT121B