BLF1043,112 NXP Semiconductors, BLF1043,112 Datasheet - Page 5

TRANSISTOR RF LDMOS SOT538A

BLF1043,112

Manufacturer Part Number
BLF1043,112
Description
TRANSISTOR RF LDMOS SOT538A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF1043,112

Package / Case
SOT-538A
Transistor Type
LDMOS
Frequency
960MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
1.05 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2409
934055708112
BLF1043
BLF1043
Philips Semiconductors
2003 Mar 13
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
Impedance measured at reference planes; see Fig.7.
Fig.6
DS
( )
Z L
= 26 V; I
12
8
4
0
800
Fig.8 Definition of transistor impedance.
Input impedance as a function of frequency
(series components); typical values.
DQ
R L
X L
= 85 mA; T
840
Z IN
gate
880
h
25 C.
920
drain
MGS998
Z L
960
f (MHz)
MDB149
1000
5
handbook, halfpage
Fig.7 Measuring reference planes: SOT538A.
reference planes
Product specification
BLF1043
MGT002

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