ATF-55143-TR1G Avago Technologies US Inc., ATF-55143-TR1G Datasheet - Page 4

• Manufacturer Part Number: ATF-55143-TR1G
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-TR1G

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Power Dissipation: 270 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 100mA
• Power Dissipation Pd: 270mW
• Noise Figure Typ: 0.6dB
• No. Of Pins: 4
• Dc Current Gain Min (hfe): 17.7
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1573-2

ATF-55143 Typical Performance Curves
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
4
Figure 6. Gain vs. Bias over Frequency.
Figure 9. IIP3 vs. Bias over Frequency.
Figure 12. Fmin vs. I
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
at 2.7 V, 10 mA bias. This circuit represents a trade‑off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de‑embedded from actual measurements.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
as a P1dB of +14.5 dBm is approached.
30
25
20
15
10
15
10
-5
5
5
0
0
0
0
5
1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
I
15
ds
ds
(mA)
3
3
and V
20
ds
4
4
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
2V, 10 mA
2.7V, 10 mA
5
5
30
2V
2.7V
3V
[1]
[1]
35
6
6
Figure 7. Fmin vs. Frequency and Bias.
Figure 10. P1dB vs. Bias over Frequency.
Figure 13. OIP3 vs. I
1.2
1.0
0.8
0.6
0.4
0.2
16
14
12
10
35
33
31
29
27
25
23
21
19
0
8
0
0
0
5
1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
I
15
ds
ds
(mA)
3
3
and V
20
ds
4
4
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
2V, 10 mA
2.7V, 10 mA
dsq
5
5
30
2V
2.7V
3V
, is set with zero RF drive applied. As P1dB is approached,
[1]
[1,2]
35
6
6
DS
= 2.7V and I
Figure 8. OIP3 vs. Bias over Frequency.
Figure 11. Gain vs. I
Figure 14. IIP3 vs. I
27
25
23
21
19
17
15
21
20
19
18
17
16
15
16
14
12
10
8
6
4
2
0
0
0
0
dsq
, the device is running close to class
5
5
1
dsq
= 5 mA, I
10
10
FREQUENCY (GHz)
2
I
I
ds
15
15
ds
ds
ds
(mA)
d
(mA)
and V
3
and V
increases to 15 mA
20
20
ds
ds
4
at 2 GHz.
25
25
at 2 GHz.
2V, 10 mA
2.7V, 10 mA
5
30
30
2V
2.7V
3V
2V
2.7V
3V
[1]
[1]
[1]
35
35
6