BF511,215 NXP Semiconductors, BF511,215 Datasheet - Page 3

• Manufacturer Part Number: BF511,215
• Description: JFET N-CHAN 20V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF511,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: N-Channel JFET
• Frequency: 100MHz
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 1.5dB
• Current - Test: 5mA
• Voltage - Test: 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Continuous Drain Current: 30 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 20 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1965-2; 933505280215; BF511 T/R

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm  10 mm  0.7 mm.
STATIC CHARACTERISTICS
T
December 1997
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
V
I
V
I
S
D
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 40 C (note 1)
I
V
I
V
DSS
GSS
(BR)GDO
(P)GS



<
typ.
3
BF510
0.7
3.0
0.8
10
20
511
R
V
V
I
 I
P
T
T
D
2.5
7.0
1.5
stg
j
DS
DGO
tot
th j-a
10
20
G
512
2.2
10
20
12
=
max.
max.
max.
max.
max.
65 to  150 C
max.
6
BF510 to 513
Product specification
513
250 mW
150 C
430 K/W
20 V
20 V
30 mA
10 mA
10 nA
20 V
10
18
3 V
mA
mA