BF908WR,115 NXP Semiconductors, BF908WR,115 Datasheet - Page 5

• Manufacturer Part Number: BF908WR,115
• Description: MOSFET NCH DUAL GATE 12V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF908WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 12V
• Current Rating: 40mA
• Noise Figure: 0.6dB
• Current - Test: 15mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 12V
• Noise Figure (max): 2.5dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.1@8V@Gate 1/1.8@8V@Gate 2pF
• Output Capacitance (typ)@vds: 1.7@8VpF
• Reverse Capacitance (typ): 0.03@8VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 300mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1969-2; 934031470115; BF908WR T/R

NXP Semiconductors
1995 Apr 25
handbook, halfpage
N-channel dual-gate MOS-FET
V
T
V
T
DS
j
DS
j
Fig.5
= 25 C.
= 25 C.
(mS)
Y fs
(mA)
= 8 V.
Fig.3 Transfer characteristics; typical values.
= 8 V.
I D
40
30
20
10
50
40
30
20
10
0
−0.6
0
0
Forward transfer admittance as a function
of drain current; typical values.
V G2-S = 0 V
−0.4
5
−0.2
10
0.5 V
0
15
0.2
V G1-S (V)
V G2-S = 4 V
4 V
1 V
20
0.4
I D (mA)
MRC281
MRC280
0.5 V
1.5 V
1.5 V
0 V
3 V
2 V
1 V
3 V
2 V
0.6
25
5
handbook, halfpage
V
T
j
G2-S
Fig.6
= 25 C.
(mA)
(mS)
Y fs
I D
Fig.4 Output characteristics; typical values.
= 4 V.
60
40
20
30
20
10
0
0
40
0
Forward transfer admittance as a function
of junction temperature; typical values.
0
4
40
8
80
Preliminary specification
V G1-S = 0.3 V
12
120
BF908WR
0.2 V
0.1 V
0 V
V DS (V)
−0.1 V
−0.2 V
−0.3 V
T
j
MRC276
MRC282
( C)
o
160
16