BAP50-05WT/R NXP Semiconductors, BAP50-05WT/R Datasheet - Page 4

• Manufacturer Part Number: BAP50-05WT/R
• Description: Diode PIN 50V 3-Pin SC-70 T/R
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05WT/R

• Package: 3SC-70
• Configuration: Dual Common Cathode
• Maximum Forward Current: 50 mA
• Maximum Forward Voltage: 1.1 V
• Maximum Reverse Voltage: 50 V
• Maximum Diode Capacitance: 0.5@5V pF
• Maximum Power Dissipation: 240 mW

NXP Semiconductors
GRAPHICAL DATA
2001 Apr 17
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
(1) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
Fig.2
s 21
amb
(dB)
10
(Ω)
r D
10
10
−1
−2
−3
−4
−5
F
= 25 C.
10
2
−1
10
0
1
= 10 mA.
3
2
0.5
−1
Insertion loss s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
1
(2) I
1
1.5
F
21
= 1 mA.

2
of the diode in on-state
2
(1)
(2)
(3)
10
(3) I
I F (mA)
2.5
f (GHz)
F
MLD605
MLD607
= 0.5 mA.
10
3
2
4
handbook, halfpage
handbook, halfpage
Fig.5
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
s 21
amb
(dB)
(fF)
600
400
200
C d
−10
−15
−20
−25
−5
= 25 C.
2
0
0
0.5
0
Isolation (s
function of frequency; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
1
21

2
1.5
8
) of the diode in off-state as a
12
2
BAP50-05W
Product specification
2.5
16
V R (V)
f (GHz)
MLD606
MLD608
20
3