MAT01AHZ Analog Devices Inc, MAT01AHZ Datasheet

MAT01AHZ

Manufacturer Part Number

MAT01AHZ

Description

Trans GP BJT NPN 45V 0.025A 6-Pin TO-78

Manufacturer

Analog Devices Inc

Type

NPNr

Datasheet

1.MAT01GHZ.pdf (8 pages)

Specifications of MAT01AHZ

Package

6TO-78

Supplier Package

TO-78

Pin Count

Minimum Dc Current Gain

500@10uA@15V

Maximum Operating Frequency

450(Typ) MHz

Maximum Dc Collector Current

0.025 A

Maximum Collector Emitter Saturation Voltage

0.2@0.1mA@1mA|0.8(Typ)@1mA@10mA V

Maximum Collector Emitter Voltage

45 V

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

25mA

Voltage - Collector Emitter Breakdown (max)

45V

Vce Saturation (max) @ Ib, Ic

800mV @ 1mA, 10mA

Current - Collector Cutoff (max)

300nA

Power - Max

500mW

Frequency - Transition

450MHz

Mounting Type

Through Hole

Package / Case

TO-78-6 Metal Can

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Dc Current Gain (hfe) (min) @ Ic, Vce

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Matched Monolithic

Dual Transistor

MAT01

PIN CONNECTION

TO-78

(H Suffix)

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive

Silicon Nitride “Triple-Passivation” process provides excellent

stability of critical parameters over both temperature and time.

NOTE: Substrate is connected to case.

Matching characteristics include offset voltage of 40 µV, tem-

perature drift of 0.15 µV/°C, and h

matching of 0.7%. Very

high h

is provided over a six decade range of collector current,

BURN-IN CIRCUIT

including an exceptional h

of 590 at a collector current of only

10 nA. The high gain at low collector current makes the

MAT01 ideal for use in low power, low level input stages.

Related parts for MAT01AHZ

MAT01AHZ Summary of contents

Page 1

PRODUCT DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, tem- perature drift of ...

Page 2

MAT01–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Breakdown Voltage BV CEO Offset Voltage V OS Offset Voltage Stability First Month V /Time OS Long Term Offset Current I OS Bias Current I B Current Gain h FE ∆h Current Gain Match FE ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS Parameter Symbol Average Offset Voltage Drift TCV Average Offset Current Drift TCI Collector-Emitter-Leakage Current I CES Collector-Base-Leakage Current I CBO Gain Bandwidth Product f T ∆V Offset Voltage Stability NOTES 1 Exclude first hour of operation to ...

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MAT01AHZ Analog Devices Inc, MAT01AHZ Datasheet

MAT01AHZ

Specifications of MAT01AHZ

Related parts for MAT01AHZ

MAT01AHZ Summary of contents

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Page 2

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Page 5

Page 6

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Page 8

Related keywords