JANTX2N3762 MICROSEMI, JANTX2N3762 Datasheet
JANTX2N3762
Manufacturer Part Number
JANTX2N3762
Description
Trans GP BJT PNP 40V 1.5A 3-Pin TO-39
Manufacturer
MICROSEMI
Type
PNPr
Datasheet
1.JANTX2N3762.pdf
(2 pages)
Specifications of JANTX2N3762
Package
3TO-39
Supplier Package
TO-39
Pin Count
3
Minimum Dc Current Gain
35@10mA@1V|40@150mA@1V|40@500mA@1V|30@1A@1.5V|30@1.5A@5V
Maximum Dc Collector Current
1.5 A
Maximum Base Emitter Saturation Voltage
0.8@1mA@10mA|1@15mA@150mA|1.2@50mA@500mA|1.4@100mA@1A V
Maximum Collector Emitter Saturation Voltage
0.1@1mA@10mA|0.22@15mA@150mA|0.5@50mA@500mA|0.9@100mA@1A V
Maximum Collector Emitter Voltage
40 V
Maximum Emitter Base Voltage
5 V
Available stocks
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Part Number
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Quantity
Price
Company:
Part Number:
JANTX2N3762
Manufacturer:
NES
Quantity:
1
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762
2N3762L
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/
2) Derate linearly at 2.86 mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temp. Range
Thermal Resistance Junction-to-Case
Collector-Emitter Breakdown Current
Collector-Base Cutoff Current
I
V
V
V
V
C
CB
CB
CB
CB
= 10 mAdc
= 20 Vdc
= 30 Vdc
= 40 Vdc
= 60 Vdc
Characteristics
Ratings
2N3763
2N3763L
Characteristics
@ T
0
0
C for T
C for T
A
= +25
A
A
> +25
> +25
0
C
0
0
C
C
Symbol
Symbol
T
A
2N3764
V
V
V
R
op
P
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
= 25
CEO
CBO
EBO
I
,
C
T
JC
T
stg
0
C unless otherwise noted)
2N3762*
2N3762*
2N3763*
2N3762*
2N3763*
2N3764
1.0
60
40
40
-55 to +200
Max.
1
5.0
1.5
2N3765
2N3764
2N3763*
2N3764
2N3765
2N3765
2N3765
0.5
88
60
60
V
Symbol
(BR)
I
CBO
CEO
2
TECHNICAL DATA
Unit
0
Unit
Vdc
Vdc
Vdc
Adc
C/W
W
0
C
Min.
40
60
*See appendix A for
package outline
TO-39* (TO-205AD)
TO-46* (TO-206AB)
2N3762L, 2N3763L
Qualified Level
Max.
2N3762, 2N3763
2N3764, 2N3765
100
100
10
10
JANTXV
JANTX
TO-5*
JAN
Page 1 of 2
Unit
Vdc
120101
Adc
Adc
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JANTX2N3762 Summary of contents
Page 1
PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3763 2N3762L 2N3763L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ T = +25 A Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics ...
Page 2
L, 2N3763, L, 2N3764, 2N3765 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current V = 2.0 Vdc Vdc 2.0 Vdc Vdc EB CE Emitter-Base Cutoff Current V = ...