BFR92AT/R NXP Semiconductors, BFR92AT/R Datasheet - Page 6

• Manufacturer Part Number: BFR92AT/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR92AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 40@15mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
I
G
G
C
C
gain
(dB)
UM
max
= 4 mA; V
(mS)
= 5 mA; V
B S
= maximum unilateral power gain; MSG = maximum stable gain;
50
= maximum available gain.
40
20
20
40
40
30
20
10
Fig.9
0
0
Fig.11 Circles of constant noise figure;
10
0
CE
CE
= 10 V; f = 800 MHz.
= 10 V.
Gain as a function of frequency;
typical values.
typical values.
1.7
MSG
20
1.8
10
2
2.0
G UM
40
2.5
10
F = 3.0 dB
3
60
f (MHz)
G
G max
S
MBB277
MBB280
(mS)
10
80
4
Rev. 04 - 2 March 2009
handbook, halfpage
handbook, halfpage
(mS)
I
G
G
B S
C
I
C
UM
max
gain
(dB)
= 15 mA; V
= 14 mA; V
= maximum unilateral power gain; MSG = maximum stable gain;
50
= maximum available gain.
30
20
10
10
20
30
40
30
20
10
Fig.10 Gain as a function of frequency;
Fig.12 Circles of constant noise figure;
0
0
10
0
CE
CE
= 10 V.
typical values.
typical values.
= 10 V; f = 800 MHz.
MSG
2.4
10
G UM
20
2
2.5
3.0
10
40
3
Product specification
G max
G
f (MHz)
F = 3.5 dB
S
(mS)
BFR92A
MBB276
MBB281
10
6 of 12
60
4