BAP55LX,315 NXP Semiconductors, BAP55LX,315 Datasheet

DIODE SILICON PIN SOD-882T

BAP55LX,315

Manufacturer Part Number
BAP55LX,315
Description
DIODE SILICON PIN SOD-882T
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP55LX,315

Package / Case
SOD-882
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.28pF @ 20V, 1MHz
Resistance @ If, F
800 mOhm @ 100mA, 100MHz
Power Dissipation (max)
135mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
UHF, SHF
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.28 pF at 20 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
0.8 Ohms at 100 mA
Maximum Series Resistance @ Minimum If
4.5 Ohms at 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
135 mW
Forward Current
100mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Mounting
Surface Mount
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
UHF/SHF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061239315
BAP55LX T/R
BAP55LX T/R
1. Product profile
2. Pinning information
3. Ordering information
1.1 General description
1.2 Features and benefits
1.3 Applications
Planar PIN diode in a SOD882T leadless ultra small plastic SMD package.
Table 1.
[1]
Table 2.
Pin
1
2
Type number Package
BAP55LX
BAP55LX
Silicon PIN diode
Rev. 3 — 13 January 2011
High speed switching for RF signals
Low diode capacitance
Low forward resistance
Very low series inductance
For applications up to 3 GHz
RF attenuators and switches
The marking bar indicates the cathode.
Discrete pinning
Ordering information
cathode
anode
Description
Name
-
Description
leadless ultra small plastic package; 2 terminals;
body 1 × 0.6 × 0.4 mm
[1]
Simplified outline
Transparent
1
top view
2
Product data sheet
Symbol
sym006
Version
SOD882T

Related parts for BAP55LX,315

BAP55LX,315 Summary of contents

Page 1

BAP55LX Silicon PIN diode Rev. 3 — 13 January 2011 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals Low diode ...

Page 2

... NXP Semiconductors 4. Marking Table 3. Type number BAP55LX 5. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg Thermal characteristics Table 5. Symbol R th(j-sp) 7. Characteristics Table 6. Characteristics ° unless otherwise specified. amb Symbol Parameter V forward voltage F I reverse current ...

Page 3

... NXP Semiconductors Table 6. Characteristics …continued ° unless otherwise specified. amb Symbol Parameter ISL isolation L insertion loss ins L insertion loss ins L insertion loss ins L insertion loss ins τ charge carrier life time L L series inductance S Fig 1. BAP55LX Product data sheet Conditions see Figure 4 ...

Page 4

... NXP Semiconductors 400 C d (fF) 300 200 100 ° MHz Fig 2. Diode capacitance as a function of reverse voltage; typical values 0 ISL (dB) −10 −20 −30 −40 0 1000 = 25 °C T amb Diode zero biased and inserted in series with a 50 Ω stripline circuit Fig 4. Isolation of the diode as a function of frequency ...

Page 5

... NXP Semiconductors 7.1 S-parameters 7.1.1 Diode in series configuration (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 6. BAP55LX Product data sheet 135° +0.5 +0.2 0 0.2 0.5 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Input reflection coefficient (S ) ...

Page 6

... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 7. BAP55LX Product data sheet 135° +0.5 +0.2 0 0.2 0.5 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Output reflection coefficient (S 22 All information provided in this document is subject to legal disclaimers. ...

Page 7

... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 8. BAP55LX Product data sheet 135° −1.0 −0.8 −0.6 −0.4 −0.2 180° −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Forward transmission coefficient (S All information provided in this document is subject to legal disclaimers. ...

Page 8

... NXP Semiconductors 7.1.2 Diode in parallel configuration (1) I (2) I (3) I (4) I (5) I (6) I Fig 9. BAP55LX Product data sheet 135° +0.5 (1) (2) (3) (4) (5) 0 0.2 0.5 (6) 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Input reflection coefficient (S ) ...

Page 9

... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I Fig 10. Output reflection coefficient (S BAP55LX Product data sheet 135° +0.5 (1) (2) (3) (4) (5) 0 0.2 0.5 180° (6) −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 All information provided in this document is subject to legal disclaimers. ...

Page 10

... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I Fig 11. Forward transmission coefficient (S BAP55LX Product data sheet 135° −1.0 −0.8 −0.6 −0.4 −0.2 180° −135° Ω 100 MHz to 10 GHz 0 0 100 mA F All information provided in this document is subject to legal disclaimers. ...

Page 11

... NXP Semiconductors 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1 x 0 (1) DIMENSIONS (mm are the original dimensions UNIT max 0.40 0.55 0.65 mm 0.04 0.36 0.45 0.55 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD882T Fig 12. Package outline SOD882T ...

Page 12

... NXP Semiconductors 9. Abbreviations Table 7. Acronym PIN SMD RF 10. Revision history Table 8. Revision history Document ID Release date BAP55LX v.3 20110113 • Modifications: Figure 1 on page • Section 7.1 on page BAP55LX v.2 20101216 BAP55LX v.1 20070730 BAP55LX Product data sheet Abbreviations Description P-type, Intrinsic, N-type ...

Page 13

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 14

... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 15

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.1 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 Diode in series configuration . . . . . . . . . . . . . . 5 7.1.2 Diode in parallel configuration . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Abbreviations ...

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