BAP55LX,315 NXP Semiconductors, BAP55LX,315 Datasheet
BAP55LX,315
Specifications of BAP55LX,315
BAP55LX T/R
BAP55LX T/R
Related parts for BAP55LX,315
BAP55LX,315 Summary of contents
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BAP55LX Silicon PIN diode Rev. 3 — 13 January 2011 1. Product profile 1.1 General description Planar PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features and benefits High speed switching for RF signals Low diode ...
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... NXP Semiconductors 4. Marking Table 3. Type number BAP55LX 5. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg Thermal characteristics Table 5. Symbol R th(j-sp) 7. Characteristics Table 6. Characteristics ° unless otherwise specified. amb Symbol Parameter V forward voltage F I reverse current ...
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... NXP Semiconductors Table 6. Characteristics …continued ° unless otherwise specified. amb Symbol Parameter ISL isolation L insertion loss ins L insertion loss ins L insertion loss ins L insertion loss ins τ charge carrier life time L L series inductance S Fig 1. BAP55LX Product data sheet Conditions see Figure 4 ...
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... NXP Semiconductors 400 C d (fF) 300 200 100 ° MHz Fig 2. Diode capacitance as a function of reverse voltage; typical values 0 ISL (dB) −10 −20 −30 −40 0 1000 = 25 °C T amb Diode zero biased and inserted in series with a 50 Ω stripline circuit Fig 4. Isolation of the diode as a function of frequency ...
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... NXP Semiconductors 7.1 S-parameters 7.1.1 Diode in series configuration (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 6. BAP55LX Product data sheet 135° +0.5 +0.2 0 0.2 0.5 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Input reflection coefficient (S ) ...
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... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 7. BAP55LX Product data sheet 135° +0.5 +0.2 0 0.2 0.5 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Output reflection coefficient (S 22 All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I (7) I Fig 8. BAP55LX Product data sheet 135° −1.0 −0.8 −0.6 −0.4 −0.2 180° −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Forward transmission coefficient (S All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 7.1.2 Diode in parallel configuration (1) I (2) I (3) I (4) I (5) I (6) I Fig 9. BAP55LX Product data sheet 135° +0.5 (1) (2) (3) (4) (5) 0 0.2 0.5 (6) 180° −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 mA F Input reflection coefficient (S ) ...
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... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I Fig 10. Output reflection coefficient (S BAP55LX Product data sheet 135° +0.5 (1) (2) (3) (4) (5) 0 0.2 0.5 180° (6) −0.2 −0.5 −135° Ω 100 MHz to 10 GHz 0 0 100 All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors (1) I (2) I (3) I (4) I (5) I (6) I Fig 11. Forward transmission coefficient (S BAP55LX Product data sheet 135° −1.0 −0.8 −0.6 −0.4 −0.2 180° −135° Ω 100 MHz to 10 GHz 0 0 100 mA F All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 8. Package outline Leadless ultra small plastic package; 2 terminals; body 1 x 0 (1) DIMENSIONS (mm are the original dimensions UNIT max 0.40 0.55 0.65 mm 0.04 0.36 0.45 0.55 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD882T Fig 12. Package outline SOD882T ...
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... NXP Semiconductors 9. Abbreviations Table 7. Acronym PIN SMD RF 10. Revision history Table 8. Revision history Document ID Release date BAP55LX v.3 20110113 • Modifications: Figure 1 on page • Section 7.1 on page BAP55LX v.2 20101216 BAP55LX v.1 20070730 BAP55LX Product data sheet Abbreviations Description P-type, Intrinsic, N-type ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7.1 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 Diode in series configuration . . . . . . . . . . . . . . 5 7.1.2 Diode in parallel configuration . . . . . . . . . . . . . 8 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Abbreviations ...