BAP50-04,215 NXP Semiconductors, BAP50-04,215 Datasheet - Page 4

• Manufacturer Part Number: BAP50-04,215
• Description: DIODE PIN GP 50V 50MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BAP50-04,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 1.05 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.5 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1917-2; 934055687215; BAP50-04 T/R

NXP Semiconductors
GRAPHICAL DATA
1999 Dec 03
handbook, halfpage
handbook, halfpage
General purpose PIN diode
Fig.2
(1) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
|
f = 100 MHz; T
S 21
(dB)
amb
(Ω)
r
10
D
10
|
−1
−2
−3
−4
−5
F
= 25 C.
10
2
10
0
1
= 10 mA.
3
2
0.5
−2
Forward resistance as a function of the
Insertion loss (S
forward current; typical values.
as a function of frequency; typical values.
j
= 25 C.
1
10
(2) I
−1
1.5
F
= 1 mA.
21

2
) of the diode in on-state
2
(1)
(2)
(3)
1
I F (mA)
(3) I
2.5
f (GHz)
F
MGS319
MGS317
= 0.5 mA.
10
3
4
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
|
S 21
(dB)
amb
(fF)
C d
600
400
200
−10
−15
−20
−25
|
−5
= 25 C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (S
a function of frequency; typical values.
j
= 25 C.
1
5
21
1.5

2
) of the diode in off-state as
10
2
Product specification
15
2.5
BAP50-04
V R (V)
f (GHz)
MGS320
MGL927
20
3