BAP64-05W,115 NXP Semiconductors, BAP64-05W,115 Datasheet - Page 4

• Manufacturer Part Number: BAP64-05W,115
• Description: DIODE PIN 100V 100MA SOT-323
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP64-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 100V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Continuous Current: 100 mA
• Frequency Range: 3 GHz
• Termination Style: SMD/SMT
• Carrier Life: 1.55 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.52 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.7 Ohms
• Maximum Series Resistance @ Minimum If: 20 Ohms
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.55us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1934-2; 934056232115; BAP64-05W T/R

NXP Semiconductors
GRAPHICAL DATA
2000 Jul 13
handbook, halfpage
handbook, halfpage
Silicon PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
s 21
amb
(dB)
−0.5
−1.5
−2.5
(Ω)
10
r D
10
−1
−2
F
F
= 25 C.
10
2
−1
10
0
1
= 100 mA.
= 10 mA.
2
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
j
= 25 C.
1
(1)
(3) I
(4) I
1
(2)
F
F
1.5
= 1 mA.
= 0.5 mA.
(3)
(4)
21

2
) of the diode as a
2
10
I F (mA)
2.5
f (GHz)
MLD365
MLD367
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
s 21
amb
(dB)
(fF)
500
C d
400
300
200
100
−10
−15
−20
−25
−5
= 25 C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
frequency; typical values.
j
= 25 C.
4
1
21

1.5
2
8
) of the diode as a function of
12
2
BAP64-05W
Product specification
2.5
16
V R (V)
f (GHz)
MLD366
MLD368
20
3