NTD3055L170-1G ON Semiconductor, NTD3055L170-1G Datasheet

MOSFET N-CH 60V 9A IPAK

NTD3055L170-1G

Manufacturer Part Number
NTD3055L170-1G
Description
MOSFET N-CH 60V 9A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD3055L170-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 4.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
275pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
7.3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
9 A
Power Dissipation
28.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055L170-1G
Manufacturer:
ON
Quantity:
12 500
NTD3055L170
Power MOSFET
9.0 Amps, 60 Volts, Logic Level,
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
These are Pb−Free Devices
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
pad size.
Derate above 25°C
Energy − Starting T
(V
L = 1.0 mH, I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8″ from case for 10 seconds
DD
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 25 Vdc, V
L
(pk) = 7.75 A, V
Rating
GS
J
p
= 5.0 Vdc,
(T
= 25°C
v10 ms)
p
A
A
v10 ms)
J
GS
= 25°C
= 100°C
= 25°C unless otherwise noted)
A
A
A
= 10 MW)
= 25°C
= 25°C (Note 1)
= 25°C (Note 2)
DS
= 60 Vdc)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
"15
"20
28.5
0.19
71.4
175
100
260
9.0
3.0
2.1
1.5
5.2
60
60
27
30
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
9.0 AMPERES, 60 VOLTS
3 − Source
1 2
2 − Drain
1
1 − Gate
3 − Source
ORDERING INFORMATION
2
2 − Drain
A
Y
WW
3170L
G
1 − Gate
3
R
G
MARKING DIAGRAMS
3
DS(on)
http://onsemi.com
4
4
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
N−Channel
D
= 170 mW
Publication Order Number:
(Surface Mounted)
YWW
70LG
S
(Straight Lead)
YWW
CASE 369C
CASE 369D
31
70LG
STYLE 2
STYLE 2
DPAK−3
DPAK
31
NTD3055L170/D
Drain
4
Drain
4

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NTD3055L170-1G Summary of contents

Page 1

... CASE 369D (Straight Lead) STYLE MARKING DIAGRAMS 1 − Gate YWW 4 2 − Drain 31 Drain 70LG 3 − Source 1 − Gate YWW 4 2 − Drain 31 Drain 70LG A = Assembly Location Y = Year WW = Work Week 3170L = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD3055L170/D ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD3055L170G NTD3055L170−1G NTD3055L170T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) J ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 0 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 10 8 ...

Page 6

SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE C SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2 ...

Page 8

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD3055L170/D ...

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