IRF9Z34NL International Rectifier, IRF9Z34NL Datasheet - Page 5

• Manufacturer Part Number: IRF9Z34NL
• Description: MOSFET P-CH 55V 19A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z34NL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z34NL

0.01
20
15
10
0.1
10
0.00001
5
0
1
25
D = 0.50
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
C
Case Temperature
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
( C)
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
R
Pulse Width
Duty Factor
G
-10V
t
1. Duty factor D =
2. Peak T = P
V
d(on)
Notes:
GS
V
IRF9Z34NS/L
DS
t
r
J
µs
0.01
DM
x Z
t / t
1
D.U.T.
thJC
P
2
DM
R
t
+ T
d(off)
D
C
t
1
t
f
t
2
+
-
V
DD
0.1