IRF7220 International Rectifier, IRF7220 Datasheet - Page 3

MOSFET P-CH 14V 11A 8-SOIC

IRF7220

Manufacturer Part Number
IRF7220
Description
MOSFET P-CH 14V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7220

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
14V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 5V
Input Capacitance (ciss) @ Vds
8075pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7220

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1 0 0 0
Fig 3. Typical Transfer Characteristics
1 0 0
Fig 1. Typical Output Characteristics
1 0
8 0
6 0
4 0
2 0
1
0
1.0
0
TOP
BO TTO M - 1.2V
T = 1 5 0 ° C
J
2.0
-V
-V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
- 1.4V
- 4.5V
G S
VG S
D S
T = 2 5 °C
2
J
3.0
, G a te -to -S o u rc e V o lta ge (V )
, D ra in-to-Source V oltage (V)
4
4.0
5.0
V
2 0 µ s P U L S E W ID TH
300µs PULSE W IDTH
T = 25°C
D S
6
J
= -1 0 V
6.0
8
7.0
-1.2V
8.0
1 0
A
A
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
6 0
5 0
4 0
3 0
2 0
1 0
0
-60 -40 -20
Fig 4. Normalized On-Resistance
0
I =
T O P
B O TT O M - 1 .2 V
D
-11A
-V
T , Junction Temperature ( C)
- 4 .0 V
- 3 .0 V
- 2 .0 V
- 1 .8 V
- 1 .6 V
- 1 .4 V
- 4 .5 V
V G S
J
D S
Vs. Temperature
2
0
, D rain-to-Sou rce V oltage (V )
20
4
40
60
IRF7220
30 0µ s P U LSE W ID T H
T = 1 50°C
6
80 100 120 140 160
J
V
°
GS
8
-1.2V
=
-4.5V
3
1 0
A

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