FQI2P25TU Fairchild Semiconductor, FQI2P25TU Datasheet - Page 2

• Manufacturer Part Number: FQI2P25TU
• Description: MOSFET P-CH 250V 2.3A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI2P25TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 4 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 40 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Electrical Characteristics





Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36mH, I
3. I
4. Pulse Test : Pulse width
300 s, Duty cycle
2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS

-2.3A, di/dt
300A/ s, V
T
DSS
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -2.3A, V
DD
= -50V, R
DD
Parameter

BV
G
= 25
DSS,
Starting T
Starting T
J
T
J
= 25°C
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
= 25
/ dt = 100 A/ s
= -250 V, V
= -200 V, T
= V
= -40 V, I
= -25 V, V
= -200 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -125 V, I
= -10 V
= 0 V, I
= 0 V, I
GS
Test Conditions
, I
D
S
S
D
= -2.3 A
= -2.3 A,
= -250 A
D
D
DS
= -250 A
DS
GS
D
D
C
= -1.15 A
= -1.15 A
GS
= -2.3 A,
= 0 V
= -2.3 A,
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-250
Min
-3.0
--
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3.15
Typ
-0.2
190
110
1.2
6.5
8.5
6.5
1.8
3.0
0.4
40
40
12
25
--
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--
--
--
-100
Max
-5.0
-2.3
-9.2
-5.0
100
250
-10
4.0
8.5
8.5
55
25
90
35
60
-1
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Rev. A, April 2000
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A