SPP07N65C3 Infineon Technologies, SPP07N65C3 Datasheet
SPP07N65C3
Specifications of SPP07N65C3
SPP07N65C3
SPP07N65C3IN
SPP07N65C3X
SPP07N65C3XK
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SPP07N65C3 Summary of contents
Page 1
... PG-TO220-3 P-TO220-3-31 Marking 07N65C3 07N65C3 07N65C3 Symbol jmax D puls limited jmax limited jmax tot Page 1 SPP07N65C3, SPI07N65C3 SPA07N65C3 V 650 DS R 0.6 DS(on) I 7.3 D PG-TO262-3-1 PG-TO220 P-TO220-3-1 Value SPP_I SPA 1) 7.3 7.3 1) 4.6 4.6 21.9 21.9 230 230 0.5 0.5 2.5 2.5 ± ...
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... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance Rev. 1.92 SPP07N65C3, SPI07N65C3 Symbol dv/dt Symbol R thJC R thJC_FP R thJA R ...
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... GS o(er) V =0V to 480V o(tr =380V, V =0/13V, d(on =12 Ω =7.3A =125°C j d(off =480V, I =7. =480V, I =7.3A 10V =480V, I =7. (plateau) Page 3 SPP07N65C3, SPI07N65C3 SPA07N65C3 Values min. typ. max 790 - - 260 - - 3 100 - while V is rising from 0 to 80% V oss DS while V ...
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... Unit Symbol SPA 0.024 K/W C th1 0.046 C th2 0.085 C th3 0.195 C th4 0.45 C th5 2.511 C th6 th1 th th1 th2 th,n Page 4 SPP07N65C3, SPI07N65C3 SPA07N65C3 Values min. typ 400 = 800 Value SPP_I SPA 0.00012 0.00012 0.0004578 0.0004578 0.000645 0.000645 0.001867 0.001867 0.004795 ...
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... Power dissipation tot C SPP07N65C3 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 1.92 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPP07N65C3, SPI07N65C3 SPA07N65C3 ) 100 120 ) DS = 25° 0.001 0. 0 2010-12-21 °C 160 ...
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... D parameter μ 20V 10V Rev. 1.92 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse Typ. output characteristic parameter 6,5V 6V 5, Page 6 SPP07N65C3, SPI07N65C3 SPA07N65C3 = 0.01 single pulse - =150° μ 20V 8V 6. 2010-12- ...
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... Rev. 1.92 10 Drain-source on-state resistance R DS(on) parameter : I 3.4 Ω 2.8 2.4 6V 6.5V 1.6 8V 20V 1.2 0.8 0 Typ. gate charge DS(on)max parameter 150° Page 7 SPP07N65C3, SPI07N65C3 SPA07N65C3 = 4 SPP07N65C3 2 98% typ 0 -60 - 100 ) Gate = 7.3 A pulsed D SPP07N65C3 0 max 0 2010-12-21 °C 180 T ...
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... Typ. drain current slope =125°C di/ =7.3 A par 3000 A/μs 2000 td(off) 1500 1000 500 Ω 80 100 130 R G Page 8 SPP07N65C3, SPI07N65C3 SPA07N65C3 ), inductive load, T =125° =380V, V =0/+13V td(off) tf td(on inductive load 125° =380V, V =0/+13V di/dt(on) di/dt(off) ...
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... V D 0.025 mWs 0.015 0.01 0.005 Ω 80 120 Avalanche SOA =125° =11A par Ω 80 100 130 R G Page 9 SPP07N65C3, SPI07N65C3 SPA07N65C3 ), inductive load, T =125° =380V, V =0/+13V includes SDP06S60 diode commutation losses. Eoff Eon ≤ 150 °C j 2010-12-21 =12 Ω G ...
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... Drain-source breakdown voltage V (BR)DSS SPP07N65C3 785 V 745 725 705 685 665 645 625 605 585 120 °C 160 - Typ. capacitances parameter MHz f Page 10 SPP07N65C3, SPI07N65C3 SPA07N65C3 = - 100 °C ) =0V, f=1 MHz GS C iss C oss C rss 100 200 300 400 V 2010-12-21 180 T j 600 V DS ...
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... Typ. C stored energy oss oss DS 5.5 μJ 4.5 4 3.5 3 2.5 2 1 100 200 300 Definition of diodes switching characteristics Rev. 1.92 400 600 Page 11 SPP07N65C3, SPI07N65C3 SPA07N65C3 2010-12-21 ...
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... PG-TO220-3 Rev. 1.92 SPP07N65C3, SPI07N65C3 Page 12 SPA07N65C3 2010-12-21 ...
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... PG-TO-220-3 (FullPAK) Rev. 1.92 SPP07N65C3, SPI07N65C3 Page 13 SPA07N65C3 2010-12-21 ...
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... PG-TO262-3, PG-TO262-3 (I²-PAK) Rev. 1.92 SPP07N65C3, SPI07N65C3 Page 14 SPA07N65C3 2010-12-21 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.92 SPP07N65C3, SPI07N65C3 (www.infineon.com). Page 15 SPA07N65C3 2010-12-21 ...