NTD20N03L27T4G ON Semiconductor, NTD20N03L27T4G Datasheet

NTD20N03L27T4G

Manufacturer Part Number

NTD20N03L27T4G

Description

MOSFET N-CH 30V 20A DPAK

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheet

1.NTD20N03L27T4G.pdf (6 pages)

Specifications of NTD20N03L27T4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

27 mOhm @ 10A, 5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

18.9nC @ 10V

Input Capacitance (ciss) @ Vds

1260pF @ 25V

Power - Max

1.75W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.027 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

21 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

20 A

Power Dissipation

74000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.027Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

DPAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD20N03L27T4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD20N03L27T4G

Manufacturer:

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD20N03L27T4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTD20N03L27T4G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTD20N03L27T4G

Quantity:

184

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NTD20N03L27

Power MOSFET

20 Amps, 30 Volts, N−Channel DPAK

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain−to−source diode has a ideal fast but soft recovery.

Features

•

Typical Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

MAXIMUM RATINGS

October, 2010 − Rev. 4

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

This logic level vertical power MOSFET is a general purpose part

Ultra−Low R

SPICE Parameters Available

Diode is Characterized for use in Bridge Circuits

High Avalanche Energy Specified

ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

These Devices are Pb−Free and are RoHS Compliant

Power Supplies

Inductive Loads

PWM Motor Controls

Replaces MTD20N03L in many Applications

pad size and repetitive rating; pulse width limited by maximum junction

temperature.

DSS

Derate above 25°C

Energy − Starting T

L(pk)

and V

= 24 A, V

= 30 Vdc, V

− Continuous

− Non−Repetitive (t

− Continuous @ T

− Single Pulse (t

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

DS(on)

Rating

Specified at Elevated Temperatures

= 34 Vdc)

, Single Base, Advanced Technology

= 5 Vdc, L = 1.0 mH,

= 25°C

v10 ms)

= 25°C unless otherwise noted)

= 1.0 MW)

= 25_C

= 100_C

= 25_C

v10 ms)

= 25°C (Note 1)

Symbol

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

"20

"24

1.75

1.67

71.4

150

288

100

260

0.6

W/°CW

°C/W

Unit

Vdc

Adc

Apk

°C

1 2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

20 A, 30 V, R

ORDERING INFORMATION

20N3L = Device Code

http://onsemi.com

CASE 369C

CASE 369D

STYLE 2

DPAK−3

= Year

= Work Week

= Pb−Free Package

N−Channel

DPAK

DS(on)

Publication Order Number:

Gate

= 27 mW

DIAGRAMS

NTD20N03L27/D

MARKING

Drain

Source

Related parts for NTD20N03L27T4G

NTD20N03L27T4G Summary of contents

Page 1

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device NTD20N03L27G NTD20N03L27−1G NTD20N03L27T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) C ...

Page 3

25° 0.2 0.4 0.6 0.8 ...

Page 4

V − 200 1500 1000 500 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 t r 100 t f ...

Page 5

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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