IXFH30N50 IXYS, IXFH30N50 Datasheet - Page 4

• Manufacturer Part Number: IXFH30N50
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH30N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 5200
• Qg, Typ, (nc): 227
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Figure 7. Gate Charge
Figure 9. Forward Voltage Drop of the
100
14
12
10
80
60
40
20
8
6
4
2
0
0
0.4
Figure 10. Transient Thermal Resistance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
V
10
GS
-3
= 0V
Intrinsic Diode
50
Vds=300V
Vds=300V
I
I
I
I
D
D
G
G
=30A
=30A
=10mA
=10mA
0.6
Gate Charge - nC
100
T
J
=125
V
SD
O
C
150
- Volts
0.8
T
T
J
J
=25
=25
200
O
O
10
C
C
1.0
-2
250
300
1.2
Pulse Width - Seconds
10
-1
Figure 8. Capacitance Curves
0.1
4500
4000
3500
3000
2500
2000
1500
1000
10
30
1
500
0
10
IXFH 30N50
IXFT 30N50
0
T
C
5
= 25
Coss
Coss
Ciss
Ciss
Crss
Crss
O
C
V
V
10
DS
10
DS
- Volts
0
- Volts
100
IXFH 32N50
IXFT 32N50
15
F = 1MHz
F = 1MHz
20
500
25
4 - 4
10 ms
1 ms
100 ms
DC
10
1