STW21N65M5 STMicroelectronics, STW21N65M5 Datasheet - Page 2

• Manufacturer Part Number: STW21N65M5
• Description: MOSFET N-CH 650V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 10.7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10654-5; STW21N65M5

Contents
Contents
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Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Doc ID 15427 Rev 3
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STB/F/I/P/W21N65M5