IRF7464 International Rectifier, IRF7464 Datasheet - Page 6

• Manufacturer Part Number: IRF7464
• Description: MOSFET N-CH 200V 1.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7464

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 720mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7464

IRF7464
I
A S
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.70
0.60
0.50
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
0.0
Current Sampling Resistors
.3 F
I
G
V
(B R )D S S
D.U.T.
1.0
I
D
and Waveforms
V GS = 10V
and Waveform
I D , Drain Current (A)
+
-
V
DS
2.0
V
R G
GS
20V
V D S
t p
V
G
3.0
Q
I A S
GS
D .U .T
0.01
L
Charge
Q
Q
GD
G
4.0
1 5 V
DRIVE R
5.0
+
-
V D D
A
Fig 13. On-Resistance Vs. Gate Voltage
0.70
0.60
0.50
200
160
120
80
40
0
Fig 14c. Maximum Avalanche Energy
25
7
Starting T , Junction Temperature ( C)
8
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
9
J
10
75
11
I D = 0.72A
100
12
www.irf.com
TOP
BOTTOM
13
125
14
°
0.5A
0.8A
1.2A
I D
15
150